Methods of forming patterns

ABSTRACT

Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

RELATED PATENT DATA

This patent resulted from a continuation of U.S. patent application Ser.No. 13/369,208, which was filed Feb. 8, 2012, which issued as U.S. Pat.No. 8,349,545, and which is hereby incorporated herein by reference;which resulted from a continuation of U.S. patent application Ser. No.12/397,083, which was filed Mar. 3, 2009, which is now U.S. Pat. No.8,133,664, and which is hereby incorporated herein by reference.

TECHNICAL FIELD

The technical field is methods of forming patterns, such as, forexample, methods of forming masking patterns over semiconductorsubstrates.

BACKGROUND

Numerous applications exist in which it is desired to form repeatingpatterns having a very short pitch. For instance, integrated circuitfabrication may involve formation of a repeating pattern ofmemory-storage units (i.e., NAND unit cells, dynamic random access[DRAM] unit cells, cross-point memory unit cells, etc.).

Integrated circuit fabrication may involve formation of a patterned maskover a semiconductor substrate, followed by transfer of a pattern fromthe mask into the substrate with one or more etches. The patternimparted into the substrate may be utilized to form individualcomponents of integrated circuitry.

The patterned mask may comprise photolithographically-patternedphotoresist. Multiple separate photomasks (or reticles) may be utilizedin photolithographically creating a desired masking pattern inphotoresist. A problem that may occur is that each photomasking stepintroduces risks of mask misalignment. Another problem is that eachphotomasking step is another step in a fabrication process, which canincrease costs and reduce throughput relative to fabrication processeshaving fewer steps.

A continuing goal of integrated circuit fabrication is to increaseintegrated circuit density, and accordingly to decrease the size ofindividual integrated circuit components. There is thus a continuinggoal to form patterned masks having increasing densities of individualfeatures. In cases in which the patterned masks comprise repeatingpatterns of features, there is a continuing goal to form the repeatingpatterns to higher density, or in other words to decreasing pitch. Itwould be desired to develop new methods of forming patterns which enablerepeating patterns to be formed to high density.

There is also a continuing goal to reduce costs and increase throughput.It is thus desired to develop methods of forming patterns which enablerepeating patterns to be formed with relatively few photomasking steps.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-9 are diagrammatic cross-sectional views of a portion of asemiconductor wafer shown at various process stages of an embodiment.

FIGS. 10-12 are diagrammatic cross-sectional views of a portion of asemiconductor wafer shown at various process stages of an embodiment.The process stage of FIG. 10 is subsequent to that of FIG. 2, andalternative to that of FIG. 3.

FIGS. 13-18 are diagrammatic cross-sectional views of a portion of asemiconductor wafer shown at various process stages of an embodiment.The process stage of FIG. 13 is subsequent to that of FIG. 2.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments include methods of forming patterns of openings oversemiconductor substrates. The openings may be subsequently utilized forpatterning one or more materials of the semiconductor substrates. Forinstance, the openings may be utilized for patterning DRAM components,NAND components, SRAM components, etc.

The embodiments may include formation of photolithographically-patternedfeatures over the substrate, and subsequent utilization of the featuresto align a sacrificial spacer material. Some of the sacrificial spacermaterial may then be removed to leave the pattern of openings over thesubstrate. In some embodiments, the sacrificial spacer material maycomprise a metal. For instance, the sacrificial spacer material maycomprise a metallo-organic composition. In some embodiments, the spacermaterial may be spin-cast across the features. In such embodiments, thespacer material may be dispersed in a solution having an appropriateviscosity so that the spacer material may be provided uniformly andconformally across the features. For instance, the metallo-organiccomposition may be dispersed in a fluid having propylene glycol and/orone or more propylene glycol derivatives to an amount sufficient tocreate an appropriate viscosity for conformal deposition of themetallo-organic composition.

Example embodiments are described with reference to FIGS. 1-18.

FIG. 1 shows a portion of a semiconductor construction 10. Thesemiconductor construction includes a semiconductor substrate 12 havinga plurality of spaced features 14, 16 and 18 thereover.

Semiconductor substrate 12 may comprise, consist essentially of, orconsist of, for example, monocrystalline silicon lightly-doped withbackground p-type dopant. The terms “semiconductor construction”,“semiconductive substrate” and “semiconductor substrate” mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above. In some embodiments the substrate may be a reticlesubstrate, and specifically may be a substrate that is to beincorporated into a reticle or photomask.

The semiconductor substrate may be homogeneous, or may comprise any ofnumerous layers and materials associated with integrated circuit (IC)and/or micro electromechanical system (MEMS) fabrication. For instance,the semiconductor substrate may comprise multiple layers and materialsassociated with DRAM fabrication, NAND fabrication, and/or SRAMfabrication.

Features 14, 16 and 18 comprise a material 20. Material 20 may be anysuitable composition or combination of compositions, and in someembodiments may comprise, consist essentially of or consist of organicpolymer (for instance, material 20 may comprise, consist essentially of,or consist of one or more of photoresist, polystyrene andpolymethylmethacrylate). If material 20 consists of photoresist,features 14, 16 and 18 may be formed by initially forming a layer ofphotoresist over a surface of substrate 12, and then using a photomaskto photolithographically pattern the photoresist and thereby create thefeatures. If material 20 comprises a composition other than photoresist,the features 14, 16 and 18 may be formed by initially forming a layer ofmaterial 20 over a surface of substrate 12, forming aphotolithographically-patterned photoresist mask over the layer, andthen transferring a pattern from the mask into the layer to createfeatures. Although the features 14, 16 and 20 are shown to behomogeneous, in other embodiments the features may comprise two or moredifferent materials.

Features 14, 16 of 18 are spaced from one another by gaps 22, 24, 26 and28. Such gaps extend to an upper surface of substrate 12.

The individual features have top surfaces 15, and sidewall surfaces 17extending from the top surfaces to an upper surface of substrate 12.

Referring next to FIG. 2, features 14, 16 and 18 are laterally trimmedto reduce the lateral dimensions of such features along an illustratedcross-section. In other words, features 14, 16 and 18 have a firstlateral width at the processing stage of FIG. 1, and are then subjectedto processing to reduce such lateral width to the second lateral widthwhich is illustrated in FIG. 2. The lateral trimming extends the widthsof gaps 22, 24, 26 and 28 along the illustrated cross-section.

The lateral trimming of features 14, 16 and 18 may be accomplishedutilizing any suitable processing. For instance, if features 14, 16 and18 consist of photoresist (or other organic polymer), the lateraltrimming may be accomplished utilizing an O₂-based plasma. In someembodiments the lateral trimming may utilize the O₂-based plasma incombination with one or more passivation additives (e.g., CH₂F₂). Inother embodiments, the lateral trimming may utilize wet chemicalprocessing techniques that remove the outermost portion of material 20.Example wet chemistry that may be used for the lateral trimming maycomprise an initial acid treatment of the outermost portions of material20, followed by solubilization of the acid-treated regions in an aqueousbase (for instance, tetramethyl ammonium hydroxide).

Although the laterally-trimmed features of FIG. 2 are shown to berectangular blocks, in some embodiments the lateral trimming may createother geometric shapes. For instance, the lateral trimming may transformfeatures 14, 16 and 18 of FIG. 1 into dome-shaped features.

The laterally-trimmed features 14, 16 and 18 of FIG. 2 retain topsurfaces 15 and sidewall surfaces 17, but the locations of at least someof such surfaces are shifted in the laterally-trimmed features relativeto the locations of such surfaces prior to the lateral trimming.

The lateral trimming of features 14, 16 and 18 may be omitted in someembodiments, and accordingly the processing stage of FIG. 2 may beomitted in some embodiments.

If features 14, 16 and 18 are an organic polymer (which may or may notbe photoresist, and in some embodiments may comprise, consistessentially of, or consist of one or both of polystyrene andpolymethylmethacrylate), the features may be treated to render theminsoluble during subsequent spin casting of a material 30 (discussedbelow with reference to FIG. 3), if the features would be soluble in asolvent of the cast solution.

If features 14, 16 and 18 are an organic polymer (which may or may notbe photoresist, and in some embodiments may comprise, consistessentially of, or consist of photoresist), such features may be treatedto render them inert to chemistry utilized during subsequent lateraltrimming of additional organic polymer (such subsequent lateral trimmingmay occur at, for example, a processing stage described below withreference to FIG. 7). The treatment may comprise, for example, formationof a thin layer of protective material (not shown) along exposedsurfaces of features 14, 16 and 18; inducement of a chemical change(such as chemical cross-linking) throughout the features 14, 16 and 18;and/or inducement of a chemical change along exposed outer surfaces ofthe features (such as through exposure to halogen in a plasma). In someembodiments, at least some of the treatment of the features may occurduring formation and/or treatment of the material 30 (discussed belowwith reference to FIG. 3). For example, if the treatment of the featurescomprises cross-linking, at least some of such cross-linking may beinduced during a heat treatment (for instance, a bake) of material 30utilized to convert material 30 to a metal oxide (discussed below).

Referring to FIG. 3, the material 30 is formed over features 14, 16 and18, and within the gaps 22, 24, 26 and 28 between the features. Material30 is conformal relative to the features, and accordingly has anundulating topography comprising peaks 32 over the features, andcomprising valleys 34 within the gaps between the features.

In some embodiments, material 30 may correspond to a spin-cast layer.The layer is formed by spin-casting a mixture having a suitableviscosity to form the shown conformal layer. The viscosity may beadjusted by including propylene glycol and/or one or more propyleneglycol derivatives within the mixture utilized for the spin-casting. Anexample propylene glycol derivative is propylene glycol monomethyl etheracetate. In some embodiments, the mixture utilized for spin-casting maycomprise a metallo-organic dispersed in a solution that containspropylene glycol and/or one or more propylene glycol derivatives. Forinstance, the solution may comprise a titanium-containingmetallo-organic dispersed in a solution containing propylene glycolmonomethyl ether acetate to a concentration of from about 1 weightpercent to about 5 weight percent. If the spin-cast material includes atitanium-containing metallo-organic, such metallo-organic may besubsequently treated under conditions that convert at least some of thetitanium to titanium oxide; and in some embodiments may be treated underconditions that transform an entirety of material 30 to titanium oxide.Such conditions may include a heat treatment, such as, for example,treatment at a temperature of from about 80° C. to about 140° C. Suchheating may form the titanium oxide through sol-gel reactions.

Material 30 may be formed to any suitable thickness, and in someembodiments may be formed to a thickness of less than or equal to about50 nanometers, less than or equal to about 4.0 nanometers, less than orequal to about 30 nanometers, or even less than or equal to about 20nanometers.

Material 30 may be referred to as a sacrificial material, in that someof the material is subsequently removed to form openings extending tosubstrate 12 (with such removal being described below with reference toFIG. 6).

Referring to FIG. 4, a fill material 36 is formed over material 30. Thefill material fills the valleys 34 of the undulating topography ofmaterial 30, and in the shown embodiment also covers the peaks 32 ofsuch undulating topography. Material 36 may comprise any suitablematerial, and in some embodiments may comprise, consist essentially of,or consist of an organic polymer. In some embodiments, material 36 maycomprise, consist essentially of, or consist of one or more ofphotoresist, polystyrene and polymethylmethacrylate.

Referring to FIG. 5, construction 10 is subjected to processing whichremoves material 36 from over peaks 32 of the undulating topography ofmaterial 30, while leaving material 36 within the valleys 34 of suchundulating topography. The processing may comprise an etch and/or maycomprise planarization. In the shown embodiment, the removal of material36 has caused an upper surface of material 36 to be recessed relative tothe upper surface of material 30. In other embodiments (not shown), theupper surface of material 36 may not be recessed relative to the uppersurface of material 30 after removal of some of material 36, but mayinstead be flush with the upper surface of material 30, or above theupper surface of material 30. The fill material 36 remaining at theprocessing stage of FIG. 5 fills the valleys 34 of the undulatingtopography of material 30, while leaving the peaks 32 of such undulatingtopography exposed.

Referring to FIG. 6, exposed portions of material 30 are selectivelyremoved relative to a surface of substrate 12, and relative to materials20 and 36, to create openings 40, 42, 44, 46, 48 and 50 extending to theupper surface of substrate 12. The removal of material 30 may comprisean anisotropic etch. In embodiments in which material 30 is an oxide,the surface of substrate 12 consists of silicon, and materials 20 and 36are photoresist, the selective removal of material 30 may utilizefluorine-based chemistry.

The formation of openings 40, 42, 44, 46, 48 and 50 results in creationof a plurality of additional features 52, 54, 56 and 58 which alternatewith the original features 14, 16 and 18.

The openings 40, 42, 44, 46, 48 and 50 correspond to a pattern ofopenings formed across a substrate 12. In subsequent processing, thepattern of such openings may be utilized during fabrication of one ormore IC components within substrate 12. For instance, dopant may beimplanted through the openings to form a desired dopant pattern withinsubstrate 12 and/or an etch may be conducted through the openings totransfer a desired pattern into substrate 12. Alternatively, additionalprocessing may be conducted relative to materials 36 and 30 to alter thepattern of the openings. For instance, FIG. 7 shows construction 10after fill material 36 has been subjected to conditions which reduce alateral width of the fill material along the illustrated cross-section.

If the fill material 36 is photoresist, the conditions utilized forreducing the lateral width of the fill material may correspond tophotolithographic patterning of the fill material and/or to lateraltrimming of the fill material with O₂-based plasma chemistry or with wetchemistry. In embodiments in which material 20 is photoresist, thetreatment of material 20 discussed above with reference to FIG. 2 forrendering material 20 inert during lateral trimming may enable features14, 16 and 18 to remain substantially unchanged during the lateraltrimming of fill material 36.

The reduction of the lateral width of fill material 36 exposes portionsof material 30 within the additional features 52, 54, 56 and 58. FIG. 8shows construction 10 after such portions are removed, which effectivelycorresponds to lateral trimming of regions of material 30 within theadditional features 52, 54, 56 and 58. The lateral trimming of materials30 and 36 results in lateral trimming of the additional features 52, 54,56 and 58, and lateral expansion of the openings 40, 42, 44, 46, 48 and50 along the shown cross-section. Although the additional features 52,54, 56 and 58 are shown to be approximately centered between features14, 16 and 18, in other embodiments the additional features may beoffset within the gaps between features 14, 16 and 18. Also, althoughthe additional features 52, 54, 56 and 58 are shown to have about thesame widths as features 14, 16 and 18, in other embodiments theadditional features may have different widths than the initial features14, 16 and 18. Additionally, although the shown embodiment forms onlyone additional feature between each of the original features 14, 16 and18 (to accomplish pitch doubling), in other embodiments multipleadditional features may be formed between the original features so thatan original pitch may be tripled, quadrupled, etc.

In some embodiments, the processing of FIGS. 3-8 has aligned theadditional features 52, 54, 56 and 58 with the original features 14, 16and 18, without utilization of additional photomasking steps besides thestep used to initially form the features 14, 16 and 18 (i.e., thephotomasking described with reference to FIG. 1.). This may reduce risksof mask misalignment relative to processing utilizing additionalphotomasks, and may also improve throughput relative to processingutilizing additional photomasks.

The openings 40, 42, 44, 46, 48 and 50 are together a pattern ofopenings extending across the substrate 12. The pattern of such openingsmay be utilized for creating a desired pattern within the underlyingsubstrate 12. For instance, FIG. 9 shows construction 10 after an etchhas been utilized to extend openings 40, 42, 44, 46, 48 and 50 intosubstrate 12. The formation of the pattern within substrate 12 maycorrespond to patterning of various components associate with DRAM, SRAMand/or NAND. For instance, the patterning may be utilized to create NANDgates within substrate 12.

Although FIG. 9 shows construction 10 after openings 40, 42, 44, 46, 48and 50 have been used during etching into substrate 12, in otherembodiments the openings may be used for other processing alternativelyto, or additionally to, the etching. For instance, openings 40, 42, 44,46, 48 and 50 may be utilized to define locations for deposition ofdopant within substrate 12.

The initial size of openings 40, 42, 44, 46, 48 and 50 (i.e., the sizeof the openings at the processing stage of FIG. 6) may be determined bythe thickness of the conformal sacrificial material utilized duringformation of the openings (e.g., the material 30 utilized in theembodiment of FIGS. 3-6). FIGS. 10-12 illustrate an embodiment of theinvention similar to that of FIGS. 3-6, but in which a differentthickness of conformal material is utilized to create the openings.

Referring to FIG. 10, construction 10 is shown at a processing stagesubsequent to that of FIG. 2, and alternative to that of FIG. 3.Specifically, FIG. 10 shows construction 10 at a processing stage inwhich a relatively thin layer of conformal material 60 is formed acrossfeatures 14, 16 and 18, and across the gaps 22, 24, 26 and 28 betweenfeatures. Material 60 may comprise any suitable composition, and may,for example, comprise any of the compositions discussed above relativeto material 30. Material 60 may be formed by spin-casting in a manneranalogous to that discussed above regarding the spin-casting of material30.

Referring to FIG. 11, fill material 36 is formed within the gaps 22, 24,26 and 28, and the construction is shown at a processing stage in whichthe material 60 over features 14, 16 and 18 is exposed. Such processingstage may be analogous to that discussed above with reference to FIG. 5,and may be formed with processing analogous to that discussed above withreference to FIGS. 4 and 5.

Referring to FIG. 12, exposed regions of material 60 are removed to formopenings 40, 42, 44, 46, 48 and 50; and to also form the features 52,54, 56 and 58 comprising materials 60 and 36. The openings 40, 42, 44,46, 48 and 50 at the processing stage of FIG. 12 are narrower thananalogous openings at the processing stage of FIG. 6, due to material 60being thinner than material 30. The processing of FIGS. 3-6 and 9-11illustrates that lateral widths of openings 40, 42, 44, 46, 48 and 50may be tailored by tailoring a thickness of a conformal materialutilized during creation of the openings.

The processing of FIGS. 1-12 utilizes conformal materials (30 are 60)formed across features (14, 16 and 18) and across the gaps between thefeatures (gaps 22, 24, 26 and 28). If subsequent processing is utilizedto expand openings formed along features 14, 16 and 18 (for instance,the processing described above with reference to FIGS. 7 and 8 forexpanding openings 40, 42, 44, 46, 48 and 50), such processing laterallyetches both a fill material (36), and a conformal material underlyingthe fill material (for instance, the conformal material 30 of FIGS. 7and 8). It may be advantageous in some embodiments to avoid forming theconformal material across the gaps between features 14, 16 and 18 sothat lateral etching of such conformal material may be avoided insubsequent processing. FIGS. 13-18 illustrate an example embodiment inwhich conformal material is formed selectively along features 14, 16 and18, relative to formation across an exposed surface of substrate 12.

Referring to FIG. 13, construction 10 is shown at a processing stageanalogous to that of FIG. 2. The construction includes the features 14,16 and 18, spaced from one another by gaps 22, 24, 26 and 28. Thefeatures are shown with crosshatching to assist in identifying thefeatures at subsequent processing stages. The crosshatching is not beingused to indicate the composition of the features, and specifically isnot being used to indicate that the features 14, 16 and 18 of FIG. 13are different than those of FIG. 2.

Referring to FIG. 14, a conformal material 70 is selectively formedalong the top and sidewall surfaces 15 and 17 of the features 14, 16 and18, relative to an exposed surface of substrate 12. Thus, the conformalmaterial extends along the surfaces of features 14, 16 and 18, but doesnot extend across the majority of the surface of substrate 12 withingaps 22, 24, 26 and 28. There is some amount of material 70 along thesurface of substrate 12 within such gaps, however, due to the material70 extending laterally outwardly from sidewall surfaces 17 of thefeatures 14, 16 and 18.

Material 70 may be formed by any suitable method, and in someembodiments may be formed by selective atomic layer deposition (ALD),selective vapor depositions, etc. In order to obtain precise control ofthe dimensions of small features, it may be desired that material 70 bedeposited with self-limiting deposition techniques, such as, forexample, ALD or similar. The precise control of thickness andconformality that may be afforded by such techniques may enable material70 to be deposited to within tight tolerances, which may enableoptimized control of critical dimensions utilized in pattern formation.

The compositions of material 20, the upper surface of substrate 12 andmaterial 70 may be chosen to enable material 70 to be selectivelydeposited on surfaces of material 20 relative to the upper surface ofsubstrate 12. In some example embodiments, material 20 of the features14, 16 and 18 may comprise photoresist, the upper surface of substrate12 may comprise silicon, and material 70 may comprise polysiloxane(utilizing methodologies analogous to those described by Shirai et. al.,Journal of Photopolymer Science and Technology, Volume 8, pp 141-144(1995)). In some example embodiments, material 20 of the features 14, 16and 18 may comprise titanium nitride, the upper surface of substrate 12may comprise borophosphosilicate glass, and material 70 may comprisecopper (utilizing methodologies analogous to those described by Park et.al., Journal of the Korean Physical Society, Volume 39, pp 1076-1080(2001)). In some example embodiments, material 70 may compriseselectively-deposited metal (utilizing methodologies analogous to thosedescribed by Sankir et. al., Journal of Materials Processing Technology,Volume 196, pp 155-159 (2008)). In some example embodiments, material 70may comprise selectively-deposited silicon dioxide (utilizingmethodologies analogous to those described by Lee et. al., Semicond. SciTechnol., Volume 18, pp L45-L48 (2003)). In some example embodiments,material 70 may comprise selectively-deposited HFO (utilizingmethodologies analogous to those described by Chen et. al., Mat. Res.Soc. Symp. Proc., Volume 917, pp 161-166 (2006)). In some exampleembodiments, material 70 may comprise selectively-deposited polymer(utilizing methodologies analogous to those described in U.S. Pat. No.5,869,135).

Referring to FIG. 15, fill material 36 is formed over material 70 andwithin the gaps 22, 24, 26 and 28 between features 14, 16 and 18.

Referring to FIG. 16, some of the material 36 is removed to expose thematerial 70 over features 14, 16 and 18. Such removal may beaccomplished utilizing processing analogous to that discussed above withreference to FIGS. 4 and 5.

Referring to FIG. 17, material 70 is removed to form openings 40, 42,44, 46, 48 and 50 extending to substrate 12. The removal of material 70is selective relative to materials 20 and 36, as well as relative to amaterial along the upper surface of substrate 12 in the shownembodiment. Such selective removal may be accomplished with any suitableprocessing. The formation of openings 40, 42, 44, 46, 48 and 50 leaves aplurality of features 52, 54, 56 and 58, with such features consistingof fill material 36.

Referring to FIG. 18, features 52, 54, 56 and 58 are reduced in lateralwidth along the shown cross-section, resulting in lateral expansion ofopenings 40, 42, 44, 46, 48 and 50. If material 36 comprisesphotoresist, the reduction in lateral width of features 52, 54, 56 and58 may be accomplished with photolithographic processing and/or with thelateral trim methodologies discussed above with reference to FIG. 2.

A difference between the processing of FIGS. 17 and 18 relative to thatof FIGS. 6-8 is that only material 36 is removed in the processing ofFIGS. 17 and 18, rather than the removal of materials 36 and 30 in theprocessing of FIGS. 6-8. Such may provide an advantage to utilization ofthe processing of FIGS. 13-18 relative to that of FIGS. 6-8 in someembodiments, in that it may remove at least one process step.

The openings 40, 42, 46, 48 and 50 may be utilized for subsequentprocessing of substrate 12, analogous to the processing discussed abovewith reference to FIG. 9.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

We claim:
 1. A method of forming a pattern of openings, comprising:forming a plurality of organic polymer features over a semiconductorsubstrate; forming a metal-containing material over and between thefeatures; forming organic fill material over the metal-containingmaterial and patterning the fill material to expose regions of themetal-containing material adjacent the features; and removing theexposed regions of the metal-containing material to create the patternof openings over the semiconductor substrate.
 2. The method of claim 1wherein the metal-containing material comprises titanium.
 3. The methodof claim 1 wherein the organic polymer features comprise one or more ofphotoresist, polystyrene and polymethylmethacrylate.
 4. The method ofclaim 1 wherein the organic polymer features comprise photoresist. 5.The method of claim 1 wherein the organic polymer features comprisepolystyrene.
 6. The method of claim 1 wherein the organic polymerfeatures comprise polymethylmethacrylate.
 7. The method of claim 1wherein the openings have widths along a cross-section, and furthercomprising extending said widths by removing some of the fill materialafter forming the openings.
 8. A method of forming a pattern ofopenings, comprising: forming a plurality of organic material featuresover a monocrystalline silicon substrate; forming a metal-containinglayer along the features and across spaces between the features; formingfill material over the metal-containing layer and patterning the fillmaterial to expose regions of the metal-containing layer that are alongthe features; and removing the exposed regions of the metal-containinglayer selectively relative to the fill material and to the features; theremoval of the exposed regions of the metal-containing layer creatingthe pattern of openings over the semiconductor substrate.
 9. The methodof claim 8 wherein the forming of the metal-containing layer comprisesspin-casting of a mixture containing a metallo-organic compositiondispersed in a solution comprising propylene glycol and/or one or morepropylene glycol derivatives.
 10. The method of claim 8 wherein themetal-containing layer comprises titanium.
 11. The method of claim 10further comprising heating the metal-containing layer to incorporate thetitanium into titanium oxide, and wherein said heating occurs before theprovision of the fill material.
 12. A method of forming a pattern ofopenings, comprising: photolithographically forming a plurality ofphotoresist features over a monocrystalline silicon substrate, thefeatures being spaced from one another by gaps; trimming the photoresistfeatures; treating the trimmed photoresist features to render theminsoluble during subsequent spin-casting of a layer; spin-casting thelayer across the features and within the gaps; the spin-cast layerhaving an undulating topography; the undulating topography comprisingpeaks over the features, and comprising valleys within the gaps betweenthe features; forming photoresist fill within the valleys while leavingthe peaks of the spin-cast layer exposed; removing exposed regions ofthe spin-cast layer selectively relative to the photoresist fill and tothe features; the removal of the exposed regions of the spin-cast layercreating the pattern of openings over the substrate; and expanding theopenings of said pattern by patterning the photoresist fill, and thenremoving portions of the spin-cast layer exposed after the patterning ofthe photoresist fill.
 13. The method of claim 12 wherein the spin-castlayer comprises a titanium-containing metallo-organic dispersed in asolution that contains propylene glycol and/or one or more propyleneglycol derivatives.